文献类型：期刊文献

英文题名：Energy band diagram of metal/Tm2O3/Si stack structure acquired from the study of leakage current mechanisms

作者：Yao, Bo[1];Zhu, Yanyan[1];Fang, Zebo[1];Tan, Yongsheng[1];Liu, Shiyan[1];Yuan, Junjun[1];Qiu, Qinglin[1]

机构：[1]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China

年份：2016

卷号：611

起止页码：52

外文期刊名：THIN SOLID FILMS

收录：SCI-EXPANDED(收录号：WOS:000377933200009)、、WOS

基金：This work was supported in part by the Natural Science Foundation of China under Grant 51272159, 61405118, 61504082 and the Natural Science Foundation of Zhejiang Province under Grant LY15A040001, LQ13A040004, LQ16F040001 and the Natural science Foundation of Shanghai under Grant 15ZR1418700.

语种：英文

外文关键词：Leakage current mechanisms; Fowler-Nordheim tunneling; Schottky emission; Tm2O3

外文摘要：Metal-oxide-semiconductor capacitors with Tm2O3 high-k gate dielectrics were fabricated. Based on the I-V measurements of Al/Tm2O3/Si devices at different temperatures, the leakage current mechanisms for Al/Tm2O3/Si stack structures have been extracted. The results reveal that the dominant conduction mechanisms under substrate injection and gate injection are Schottky emission and Frenkel-Poole conduction, respectively. The determined Schottky barrier height between Tm2O3 and Si is 1.68 +/- 0.2 eV. The further I-V measurements of Fowler-Nordheim tunneling characteristics at 77 K is conducted to the conduction-band offset at the interfaces of Al/Tm2O3 and Pt/Tm2O3, which are 2.95 eV and 1.75 eV, respectively. The energy band diagrams of the Al (Pt)/Tm2O3/Si stack structures were obtained from the above results, which show that Tm2O3 is a promising candidate for use as high-k gate dielectric on high-performance substrates. (C) 2016 Elsevier B.V. All rights reserved.