文献类型：期刊文献

英文题名：Near-infrared-II balanced ambipolar phototransistors realized by the optimized planar-heterojunction channel layer and charge-transfer-complex photosensitive layer

作者：Yin, Yujia[1];Xi, Zhiyuan[1];Yu, Qing[2];Gong, Xinyi[1];Wang, Haonan[3];Yao, Bo[1];Xu, Haitao[1];Shi, Jia[1];Yin, Leyan[1];Yang, Wenjin[1];Zhang, Xun[1];Wei, Yunxiao[1];Luo, Xiao[4];Fang, Zebo[1]

机构：[1]Shaoxing Univ, Zhejiang Engn Res Ctr MEMS, Shaoxing 312000, Peoples R China;[2]Semicond Mfg Elect Shaoxing Corp, Shaoxing 312000, Peoples R China;[3]Fuzhou Univ, Inst Optoelect Display, Coll Phys & Informat Engn, Natl & Local United Engn Lab Flat Panel Display Te, Fuzhou 350108, Peoples R China;[4]Univ Elect Sci & Technol China UESTC, Sch Optoelect Sci & Engn, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China

年份：2023

卷号：48

外文期刊名：RESULTS IN PHYSICS

收录：SCI-EXPANDED(收录号：WOS:000985289900001)、、EI(收录号：20230067800)、Scopus(收录号：2-s2.0-85152688671)、WOS

基金：This work was supported by the Zhejiang Province Public Welfare Technology Application Research Project (Grant No. LGG21F050001), the National Natural Science Foundation of China (Grant Nos. 51872186, 21903084, 62274024), the Applied Basic Research Program of Sichuan Province (No. 2021YJ0408), the Medical Engineering In-novations Program of UESTC (No. ZYGX2021YGCX012) and Science and Technology Planning Project of Shaoxing City (No. 2022B41001).

语种：英文

外文关键词：Band structure - Computer circuits - Heterojunctions - Hybrid systems - Infrared devices - Light sensitive materials - Photosensitivity - Phototransistors - Vanadium pentoxide

外文摘要：Ambipolar organic phototransistors (OPTs) operating in the near-infrared II (NIR-II) were successfully fabricated by using an organic planar-heterojunction channel layer and an organic-inorganic charge-transfer-complex (CTC) photosensitive layer. After optimizations of the ratio of vanadium pentoxide in CTC hybrid system and the substrate temperature of the deposited channel layer, the devices shows the most balanced output characteristics in the dark and under 1310 nm light illu-mination. These OPTs yielded significantly enhanced currents upon infrared light illumination with the photoresponsivities as high as 0.115 A/W for the n-channel, and 2.600 A/W for the p-channel, respectively. By analyzing the energy band of the heterojunction structure, the operating mechanisms of the balanced ambipolar NIR-II OPTs were derived. This work will be helpful to design the ambipolar infrared phototransistor and brings forward design thought of realization of optical complementary MOS logic circuits in the future.