文献类型：期刊文献

英文题名：Superconducting transition and topological behavior in π-SnS under high pressure

作者：Lv, Xindeng[1];Liu, Feng[2,3];Wu, Min[4];Li, Qian[4];Huang, Yanping[1];Chen, Fei[5];Cui, Tian[1,6]

机构：[1]Ningbo Univ, Inst High Pressure Phys, Sch Phys Sci & Technol, Ningbo 315211, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[3]Kwansei Gakuin Univ, Sch Sci & Technol, Dept Nanotechnol Sustainable Energy, Gakuen 21, Sanda 6691337, Japan;[4]Liaocheng Univ, Sch Phys Sci & Informat Technol, Liaocheng 252000, Shandong, Peoples R China;[5]NingboTech Univ, Sch Mat Sci & Engn, Ningbo 315100, Peoples R China;[6]Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130012, Peoples R China

年份：2025

卷号：111

期号：5

外文期刊名：PHYSICAL REVIEW B

收录：SCI-EXPANDED(收录号：WOS:001459360600005)、、EI(收录号：20250817916384)、Scopus(收录号：2-s2.0-85218167433)、WOS

基金：This work was supported by the National Key R&D Program of China (Grant No. 2022YFA1405500) , National Natural Science Foundation of China (Grants No. 52072188 and No. 12304072) , Program for Science and Technology Innovation Team in Zhejiang (Grant No. 2021R01004) , and Natural Science Foundation of Ningbo (Grant No. 2021J121) . National Natural Science Foundation of China (Grant No. 12074205) and NSFZP (Grant No. LQ21A040004) . The authors thank the staff of the BL15U1 beamline of the Shanghai Synchrotron Radiation Facility (SSRF) . This work was also supported by the User Experiment Assist System of the Shanghai Synchrotron Radiation Facility (SSRF) .

语种：英文

外文关键词：Carrier concentration - High pressure effects in solids - High pressure engineering - II-VI semiconductors - IV-VI semiconductors - Layered semiconductors - Magnetic semiconductors - Nanocrystalline materials - Narrow band gap semiconductors - Penetration depth (superconductivity) - Superconducting transition temperature - Tin alloys - Wide band gap semiconductors

外文摘要：The interplay between superconductivity and topological properties has garnered significant research interest due to its potential implications for novel quantum materials. Here, we systematically investigate the structural, topological, and electronic transport properties of r-SnS nanocrystals under high pressure. A pressure-induced superconducting transition is observed at 30.4 GPa, characterized by a dome-shaped behavior with a maximum superconducting transition temperature (Tc) of 3.7 K, which persists up to 91 GPa. Synchrotron x-ray diffraction reveals two structural phase transitions: from P213-I to P213-II at 9.3 GPa, and subsequently to Pm3m at 44.8 GPa. Furthermore, theoretical calculations indicate that both novel high-pressure phases of SnS exhibit topological properties coexisting with superconductivity. The theoretical results reveal an evolution from trivial semiconductors to weak topological and ultimately to strong topological materials. Our findings suggest that r-SnS provides an excellent platform for exploring the interplay between superconductivity and the topological characteristics of electronic systems.