文献类型：期刊文献

英文题名：Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment

作者：Wu, Qiuju[1];Yu, Qing[2];He, Gang[3];Wang, Wenhao[3];Lu, Jinyu[3];Yao, Bo[1];Liu, Shiyan[1];Fang, Zebo[1]

机构：[1]Shaoxing Univ, Zhejiang Engn Res Ctr MEMS, Shaoxing 312000, Peoples R China;[2]Semicond Mfg Elect Shaoxing Corp, Shaoxing 312000, Peoples R China;[3]Anhui Univ, Sch Mat Sci & Engn, Hefei 230601, Peoples R China

年份：2023

卷号：13

期号：11

外文期刊名：NANOMATERIALS

收录：SCI-EXPANDED(收录号：WOS:001005310000001)、、WOS

基金：This research was funded by National Natural Science Foundation of China (Nos. 51872186, 11774001), Zhejiang Province Public Welfare Technology Application Research Project (No. LGG21F050001), Anhui Project (No. Z010118169), Open Fund Project of Zhejiang Engineering Research Center of MEMS in Shaoxing University (No. MEMSZJERC2202) and Science and Technology Planning Project of Shaoxing City (No. 2022B41001).

语种：英文

外文关键词：Er2O3 thin film; interface state density; conduction mechanisms; high-k gate dielectric

外文摘要：In this paper, the effect of atomic layer deposition (ALD)-derived Al2O3 passivation layers and annealing temperatures on the interfacial chemistry and transport properties of sputtering-deposited Er2O3 high-k gate dielectrics on Si substrate has been investigated. X-ray photoelectron spectroscopy (XPS) analyses have showed that the ALD-derived Al2O3 passivation layer remarkably prevents the formation of the low-k hydroxides generated by moisture absorption of the gate oxide and greatly optimizes the gate dielectric properties. Electrical performance measurements of metal oxide semiconductor (MOS) capacitors with different gate stack order have revealed that the lowest leakage current density of 4.57 x 10(-9) A/cm(2) and the smallest interfacial density of states (Dit) of 2.38 x 10(12) cm(-2) eV(-1) have been achieved in the Al2O3/Er2O3/Si MOS capacitor, which can be attributed to the optimized interface chemistry. Further electrical measurements of annealed Al2O3/Er2O3/Si gate stacks at 450 degrees C have demonstrated superior dielectric properties with a leakage current density of 1.38 x 10(-9) A/cm(2). At the same, the leakage current conduction mechanism of MOS devices under various stack structures is systematically investigated.