文献类型：期刊文献

中文题名：非晶ErAlO高k栅介质薄膜的制备及性能研究

英文题名：Fabrication and properties of amorphous ErAlO high-k gate dielectrics films

作者：陈伟[1,2];方泽波[2];谌家军[1]

机构：[1]西华师范大学物理与电子信息学院;[2]绍兴文理学院物理与电子信息系

年份：2010

期号：1

起止页码：28

中文期刊名：电子元件与材料

外文期刊名：Electronic Components and Materials

收录：CSTPCD、、北大核心2008、CSCD_E2011_2012、北大核心、CSCD

基金：绍兴市重点科研资助项目(No.2007A21015);国家自然青年科学基金资助项目(No.60806031)

语种：中文

中文关键词：Er2O3-Al2O3;高k栅介质;射频磁控溅射

外文关键词：Er2O3-Al2O3; high-k gate medium; RF magnetron sputtering

中文摘要：采用射频磁控溅射法在p型Si(100)衬底上成功制备了非晶Er2O3-Al2O3(ErAlO)栅介质复合氧化物薄膜。研究了ErAlO薄膜的结构及电学特性。XRD测量显示,ErAlO薄膜具有良好的热稳定性,样品经过900℃氧气氛退火30 min后仍保持非晶态结构。AFM照片显示,其表面粗糙度小于0.2 nm,平整度良好。ErAlO栅MOS结构在氧分压为1%时,薄膜的有效相对介电常数为9.5,外加偏压(Vg)为–1 V时样品的漏电流密度为7.5×10–3 A/cm2。非晶ErAlO薄膜是一种很有希望取代SiO2的新型高k栅介质候选材料。

外文摘要：High-k dielectric Er2O3-Al2O3（ErAlO） complex oxide films were deposited on p-type Si（100） substrates by radio-frequency magnetron sputtering.Structure and electrical properties of the ErAlO films were studied.XRD analysis shows that the films are amorphous even after thermal annealing in O2 at 900 ℃ for 30 min.AFM analysis suggests that the films have an excellent surface appearance with RMS of less than 0.2 nm.The capacitance-voltage（C-V） curves of MOS capacitor present that the relative permittivity of the films is about 9.5 and leakage current density is 7.5×10–3 A/cm2 at –1 V.The amorphous ErAlO film is a promising candidate for high-k gate dielectric in Si microelectronic devices.