文献类型：期刊文献

英文题名：Correlating optimal electrode buffer layer thickness with the surface roughness of the active layer in organic phototransistors

作者：Yao, Bo[1,4];Li, Yanli[1];Wen, Zhanwei[1];Zhou, Maoqing[1];Lv, Wenli[1];Luo, Xiao[1];Peng, Yingquan[1,2];Li, Wenhao[1];Gong, Gu[1];Liu, Xingyuan[3]

机构：[1]Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China;[2]Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China;[3]Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China;[4]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China

年份：2014

卷号：193

起止页码：35

外文期刊名：SYNTHETIC METALS

收录：SCI-EXPANDED(收录号：WOS:000337854600006)、、EI(收录号：20141817645429)、Scopus(收录号：2-s2.0-84899007482)、WOS

基金：This work was supported by the National Natural Science Foundation of China Grant No. 10974074 and the Research Fund for the Doctoral Program of Higher Education of China Grant No. 20110211110005.

语种：英文

外文关键词：Buffer layer; Pentacene; Organic phototransistor; Atomic force microscopy

外文摘要：Inserting a C60 buffer layer between Au source/drain electrodes and pentacene active layer has been proved to improve the performances of pentacene organic phototransistors (PENT-OPTs) in our previous study. Buffer layer certainly has an optimal thickness with which the modified device can achieve the best performance. Based on the surface morphology analysis of different thickness C60 buffer layer on pentacene film, we further optimized the thickness of C60 buffer layer for best performance of PENT-OPTs and investigated its physical origins. Studies on PENT-OPTs with different pentacene surface morphology realized by different substrate temperatures indicate that the optimal thickness of C60 buffer layer directly related to the surface roughness of pentacene active layer and it is found that the optimized buffer layer thickness increases with the roughness of pentacene layer. Besides, we found that the photogenerated current of OPTs increases with the increasing of gate electric bias and then gradually reach saturation. An approximate analytical expression for gate voltage dependence of the photogenerated current was derived and used to fit the experiment data. An important parameter, saturated photoresponsivity, was introduced for better comparing the performances of OPTs. (C) 2014 Elsevier B.V. All rights reserved.