文献类型：期刊文献

英文题名：Single crystalline Tm2O3 films grown on Si (0 0 1) by atomic oxygen assisted molecular beam epitaxy

作者：Ji, T.[1];Cui, J.[1];Fang, Z. B.[2];Nie, T. X.[1];Fan, Y. L.[1];Li, X. L.[3];He, Q.[3];Jiang, Z. M.[1]

机构：[1]Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[3]Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201214, Peoples R China

年份：2011

卷号：321

期号：1

起止页码：171

外文期刊名：JOURNAL OF CRYSTAL GROWTH

收录：SCI-EXPANDED(收录号：WOS:000290057900030)、、WOS

基金：This work was supported by the special funds for the Major State Basic Research Project no. 2011CB925601 and the Natural Science Foundation of China under Grant nos. 10874026 and 60806031. The authors thank beamline BL14B1 (SSRF) for providing the beam time.

语种：英文

外文关键词：Molecular beam epitaxy; Oxides; Rare earth compounds; Dielectric materials

外文摘要：Ultrathin single crystalline Tm2O3 films have been grown on Si (0 0 1) substrate by molecular beam epitaxy using metallic Tm source at a substrate temperature of 600 degrees C and an atomic oxygen ambient pressure of 2 x 10(-7) Torr. The epitaxial relationship between the Tm2O3 films and the Si substrates is Tm2O3 (1 1 0)//Si (0 0 1), Tm2O3 [0 0 1]//Si[110] or Tm2O3[1 -1 0]//Si[110]. Higher oxygen pressure would change the preferential growth orientations from (1 1 0) to (1 1 1) with the growth mode from epitaxy to non-epitaxy. After annealing in O-2 ambience at 450 degrees C for 30 min, the single crystalline films exhibit a dielectric constant of 10.8 and a leakage current density of 2 x 10(-3) A/cm(2) at an electric field of 1 MV cm(-1) with an equivalent oxide thickness of 2.3 nm. Small angle X-ray reflectivity measurements were carried out to investigate the annealing effect in the improvement of electrical properties of the films. (C) 2011 Elsevier B.V. All rights reserved.