文献类型：期刊文献

英文题名：Band offsets of epitaxial Tm2O3 high-k dielectric films on Si substrates by X-ray photoelectron spectroscopy

作者：Wang, J. J.[1,2];Fang, Z. B.[1];Ji, T.[3];Ren, W. Y.[2];Zhu, Y. Y.[3];He, G.[4]

机构：[1]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[2]China W Normal Univ, Coll Phys & Elect Informat, Nanchong 637002, Peoples R China;[3]Fudan Univ, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China;[4]Anhui Univ, Anhui Key Lab Informat Mat & Devices, Sch Phys & Mat Sci, Hefei 230039, Peoples R China

年份：2012

卷号：258

期号：16

起止页码：6107

外文期刊名：APPLIED SURFACE SCIENCE

收录：SCI-EXPANDED(收录号：WOS:000302784200031)、、WOS

基金：This work was supported by National Natural Science Foundation of China (Grant No. 60806031, 11004130, 10804149), by the Natural Science Foundation of Zhejiang province, China (Grant No. Y6100596) and by the Key Fundamental Project of Shanghai (Grant No. 10JC1405900).

语种：英文

外文关键词：Tm2O3; High-k dielectric; XPS; Band offsets

外文摘要：Tm2O3 crystalline films have been deposited on Si (0 0 1) by molecular beam epitaxy (MBE). Band alignments of Tm2O3/Si gate stacks were studied by X-ray photoelectron spectroscopy (XPS). According to XPS measurements, it can be noted that a valence-band offset of -3.1 +/- 0.1 eV and a conduction-band offset of 2.3 +/- 0.3 eV for the Tm2O3/Si heterojunction have been obtained. Based on analysis from O 1s energy-loss spectrum, the energy gap of Tm2O3 is determined to be 6.5 +/- 0.3 eV. A relatively thicker interfacial SiOx layer was observed for the as-annealed samples. However, no apparent change in band alignment has been observed for Tm2O3/Si heterojunction with the formation of interface layer, which has been discussed in detail. (C) 2012 Elsevier B. V. All rights reserved.