文献类型：期刊文献

中文题名：Band gap and structure characterization of Tm_2O_3 films

英文题名：Band gap and structure characterization of Tm2O3 films

作者：Wang Jianjun[1,2];Ji Ting[3];Zhu Yanyan[4];Fang Zebo[1];Ren Weiyi[2]

机构：[1]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[2]China W Normal Univ, Coll Phys & Elect Informat, Nanchong 637002, Peoples R China;[3]Taiyuan Univ Technol, Dept Phys & Optoelect, Taiyuan 030024, Peoples R China;[4]Shanghai Univ Elect Power, Dept Math & Phys, Shanghai 200090, Peoples R China

年份：2012

卷号：30

期号：3

起止页码：233

中文期刊名：稀土学报：英文版

外文期刊名：JOURNAL OF RARE EARTHS

收录：SCI-EXPANDED(收录号：WOS:000302991900009)、CSTPCD、、EI(收录号：20122215077892)、Scopus(收录号：2-s2.0-84861542596)、CSCD2011_2012、WOS、CSCD

基金：Project supported by the National Natural Science Foundation of China (60806031, 11004130), and the Natural Science Foundation of Zhejiang Province, China (Y6100596)

语种：英文

中文关键词：带隙;电影;Si(001)衬底;X射线光电子能谱;结构;原子力显微镜;表面形貌;分子束外延

外文关键词：band gap; Tm2O3 films; high-k dielectric; rare earths

中文摘要：Single crystalline Tm2O3 films were grown on Si (001) substrates by molecular beam epitaxy using metallic Tm source and atomic oxygen source. X-ray photoelectron spectroscopy, atomic force microscopy and high-resolution transmission electron microscopy were employed to investigate the compositions, surface morphology and microstructure of the sample. A very flat surface with a root mean square roughness of 0.3 nm could be reached, and a sharp interface between the film and the Si substrate was achieved. The result of optical spectrum at ultraviolet and visible wavelengths showed that the band gap of the Tm2O3 film was 5.76 eV.

外文摘要：Single crystalline Tm2O3 films were grown on Si (001) substrates by molecular beam epitaxy using metallic Tm source and atomic oxygen source. X-ray photoelectron spectroscopy, atomic force microscopy and high-resolution transmission electron microscopy were employed to investigate the compositions, surface morphology and microstructure of the sample. A very flat surface with a root mean square roughness of 0.3 nm could be reached, and a sharp interface between the film and the Si substrate was achieved. The result of optical spectrum at ultraviolet and visible wavelengths showed that the band gap of the Tm2O3 film was 5.76 eV.