文献类型：期刊文献

中文题名：Si/Si直接键合界面热应力模型及模拟

英文题名：Model and Simulation of the Interfacial Stresses of Si/Si Direct Bonding

作者：陈新安[1];黄庆安[2]

机构：[1]绍兴文理学院微电子实验室;[2]东南大学MEMS教育部重点实验室

年份：2006

卷号：43

期号：11

起止页码：541

中文期刊名：微纳电子技术

外文期刊名：Micronanoelectronic Technology

收录：CSTPCD

基金：国家863计划项目(2003AA404010);国家杰出青年科学基金资助项目(50325519)

语种：中文

中文关键词：Si/Si直接键合;界面应力;模型;模拟

外文关键词：Si/Si direct bonding; interfacial stresses; model; simulation

中文摘要：根据Suhir的双金属带的热应力分布理论,建立了Si/Si直接键合界面应力模型,推导出了由于高温引起的正应力、剪切应力和剥离应力的解析方程。并且应用模拟软件Matlab对热应力进行了模拟,直观地表现了键合界面应力的大小及其分布情况,对键合工艺有一定的指导意义。

外文摘要：A physical model of the interfacial stresses of Si/Si direct bonding was presented based on the Suhire theory of stresses presented in bimetal strips, and the analytical equations of the normal stresses, the shearing stresses and the peeling stresses were derived according to the stress model. Then, Matlab stress simulation tool was used for the interfical stresses. The simulation results directly show the distribution of the interfacial stresses of Si/Si direct bonding. The results are valuable for bonding process.