文献类型：期刊文献

英文题名：Effects of graphene defect on electronic structures of its interface with organic semiconductor

作者：Yang, Qing-Dan[1];Dou, Wei-Dong[1,2];Wang, Chundong[1];Mo, Hin-Wai[1];Lo, Ming-Fai[1];Yuen, Muk Fung[1];Ng, Tsz-Wai[1];Zhang, Wen-Jun[1];Tsang, Sai-Wing[3];Lee, Chun-Sing[1]

机构：[1]City Univ Hong Kong, Dept Phys & Mat Sci, Ctr Super Diamond & Adv Films COSDAF, Hong Kong, Hong Kong, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[3]City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

年份：2015

卷号：106

期号：13

外文期刊名：APPLIED PHYSICS LETTERS

收录：SCI-EXPANDED(收录号：WOS:000352310700053)、、EI(收录号：20151400709713)、Scopus(收录号：2-s2.0-84961289046)、WOS

基金：The work described in this paper was supported by a grant from the Research Grants Council of the Hong Kong Special Administrative Region China (Project No. T23-713/11), the Strategic Research Grant of City University of Hong Kong (Project No. 7004190), and the National Natural Science Foundation of China (Nos. 61106131 and 61474077).

语种：英文

外文关键词：Charge transfer - Copper metallography - Defect density - Electronic properties - Electronic structure - Photoelectron spectroscopy - Plasma applications

外文摘要：Electronic structures of copper hexadecafluorophthalocyanine (F16CuPc)/graphene with different defect density were studied with ultra-violet photoelectron spectroscopy. We showed that the charge transfer interaction and charge flow direction can be interestingly tuned by controlling the defect density of graphene through time-controlled H-2 plasma treatment. By increasing the treatment time of H2 plasma from 30 s to 5 min, both the interface surface dipole and the electron transporting barrier at F16CuPc/graphene interface are significantly reduced from 0.86 to 0.56 eV and 0.71 to 0.29 eV, respectively. These results suggested that graphene's defect control is a simple approach for tuning electronic properties of organic/graphene interfaces. (C) 2015 AIP Publishing LLC.