文献类型：期刊文献

英文题名：Plasmons in double interfaces system of Si3N4/SiO2/Si irradiated by (CO)-C-60

作者：Liu, CS

机构：[1]Shaoxing Univ, Shaoxing Coll Arts & Sci, Dept Phys, Shaoxing 312000, Zhejiang, Peoples R China

年份：2004

卷号：75

期号：1

起止页码：51

外文期刊名：VACUUM

收录：SCI-EXPANDED(收录号：WOS:000222156300007)、、WOS

语种：英文

外文关键词：plasmons; Si3N4; SiO2-Si; dosage; bias field

外文摘要：The first level plasmons of Si in the pure Si state, in the SiO2 state and in the Si3N4 state (corresponding to bonding energy 116.95, 122.0 and 127.0 eV) were investigated directly with X-ray photoelectron spectroscopy before and after Co-60 radiation. The experimental results demonstrate that there existed two interfaces, one consisted of plasmons of Si in the Si3N4 and SiO2 states, while another was made of plasmons of Si in the pure Si state and in the SiO2 state. When the Si3N4-SiO2-Si Samples were irradiated by Co-60 the interface at Si3N4/SiO2 was extended and at the same time the center of this interface moved towards the surface of Si3N4. The concentration of plasmon for silicon in the SiO2 state is decreased at the SiO2-Si interface, and the effects of radiation bias field on plasmons in the SiO2-Si interface are observable. Finally, the mechanism of experimental results is analyzed by the quantum effect of plasmon excited by the photoelectron. (C) 2004 Elsevier Ltd. All rights reserved.