文献类型：期刊文献

中文题名：Ferromagnetism in Eu-doped ZnO films deposited by radio-frequency magnetic sputtering

英文题名：Ferromagnetism in Eu-doped ZnO films deposited by radio-frequency magnetic sputtering

作者：Tan Yong-Sheng[1,2];Fang Ze-Bo[2];Chen Wei[2];He Pi-Mo[1]

机构：[1]Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China

年份：2010

卷号：19

期号：9

中文期刊名：中国物理B：英文版

外文期刊名：CHINESE PHYSICS B

收录：SCI-EXPANDED(收录号：WOS:000282186400095)、CSTPCD、、Scopus、CSCD2011_2012、WOS、CSCD

基金：Project supported by the National Natural Science Foundation of China (Grant Nos. 10774129 and 60425411) and the Ministry of Science and Technology of China.

语种：英文

中文关键词：射频磁控溅射;ZnO薄膜;Eu掺杂;铁磁性;沉积;超导量子干涉器件;射线衍射分析;饱和磁化强度

外文关键词：Eu-doped ZnO films; ferromagnetism; radio-frequency magnetic sputtering

中文摘要：This paper reports that Eu-doped ZnO films were successfully deposited on silicon (100) by radio-frequency magnetic sputtering. The x-ray diffraction patterns indicate that Eu substitutes for Zn in the lattice. Ferromagnetic loops were obtained by using superconducting quantum interference device at 10 K and room temperature. No discontinuous change was found in both of the zero-field-cooled and field-cooled curves. The observed ferromagnetism in Eu-doped ZnO can be attributed to a single magnetic phase. The saturation magnetisation decreased remarkably for the Eu-doped ZnO prepared by introducing 5% of oxygen in the sputtering gas or by the post annealing in O2, suggesting that the defects play key roles in the development of ferromagnetism in Eu-doped ZnO films.

外文摘要：This paper reports that Eu-doped ZnO films were successfully deposited on silicon (100) by radio-frequency magnetic sputtering. The x-ray diffraction patterns indicate that Eu substitutes for Zn in the lattice. Ferromagnetic loops were obtained by using superconducting quantum interference device at 10 K and room temperature. No discontinuous change was found in both of the zero-field-cooled and field-cooled curves. The observed ferromagnetism in Eu-doped ZnO can be attributed to a single magnetic phase. The saturation magnetisation decreased remarkably for the Eu-doped ZnO prepared by introducing 5% of oxygen in the sputtering gas or by the post annealing in O-2, suggesting that the defects play key roles in the development of ferromagnetism in Eu-doped ZnO films.