文献类型：期刊文献

英文题名：Annealing effects on the structure and electrical characteristics of amorphous Er₂O₃ films

作者：Fang Ze-Bo[1,2];Zhu Yan-Yan[1];Wang Jia-Le[1];Jiang Zui-Min[1]

机构：[1]Fudan Univ, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China

年份：2009

卷号：18

期号：8

起止页码：3542

外文期刊名：CHINESE PHYSICS B

收录：SCI-EXPANDED(收录号：WOS:000268802300067)、、WOS

基金：Project supported by the China Postdoctoral Science Foundation and Shaoxing Science and Technology Commission (Grant No 2007A21015), also partially supported by the Project of Shanghai Nanotechnology (Grant No 0852NM02400) and the National Natural Science Foundation of China (Grant No 60806031).

语种：英文

外文关键词：Er2O3; gate dielectric; amorphous

外文摘要：Amorphous Er2O3 films are deposited on Si (001) substrates by using reactive evaporation. This paper reports the evolution of the structure, morphology and electrical characteristics with annealing temperatures in an oxygen ambience. X-ray diffraction and high resolution transimission electron microscopy measurement show that the films remain amorphous even after annealing at 700 degrees C. The capacitance in the accumulation region of Er2O3 films annealed at 450 degrees C is higher than that of as-deposited films and films annealed at other temperatures. An Er2O3/ErOx/SiOx/Si structure model is proposed to explain the results. The annealed films also exhibit a low leakage current density (around 1.38 x 10(-4) A/cm(2) at a bias of -1 V) due to the evolution of morphology and composition of the films after they are annealed.