文献类型：期刊文献

英文题名：Controllable growth of copper-phthalocyanine thin film on rough graphene substrate

作者：Dou, Wei-Dong[1,2,3];Lee, Chun-Sing[2,3]

机构：[1]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[2]City Univ Hong Kong, Ctr Super Diamond & Adv Films COSDAF, Hong Kong, Hong Kong, Peoples R China;[3]City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

年份：2014

卷号：105

期号：22

外文期刊名：APPLIED PHYSICS LETTERS

收录：SCI-EXPANDED(收录号：WOS:000346265200077)、、EI(收录号：20145000317023)、Scopus(收录号：2-s2.0-84915751030)、WOS

基金：C.-S.L. would like to thank support from the City University of Hong Kong via a strategic Grant No. 7004008. W.-D.D. is supported by the National Natural Science Foundations of China (Grant Nos. 61106131 and 61474077) and Qianjiang Talents Project of Science and Technology Department of Zhejiang Province (Grant No. 2012R10075).

语种：英文

外文关键词：Copper - Crystallinity - Field effect transistors - Film growth - Film preparation - Graphene - Molecules - Thin films

外文摘要：Film growth behavior of copper-phthalocyanine (CuPc) on rough graphene (RG) and smooth graphene (SG) substrates was investigated experimentally. Both the RG and the SG are single layer graphene on metal substrates. The RG samples were prepared on copper foils and show rough surfaces; whereas, the SG samples prepared on Ni(111) substrates are characterized with much smoother surfaces. While CuPc molecules deposited on the two graphene substrates show similar molecular alignment, morphologies of the deposited films show considerable differences. On the SG substrate, CuPc molecules form two-dimensional islands with large size and sharp edges. While on the RG substrate, CuPc nucleates into particle-like grains without regular shapes. The high density of topographical defects on the RG substrate is believed to be a primary factor which leads to the formation of the smaller grains. The variation of thin film structures of CuPc with respect to the substrate temperature was also studied. Films with good crystallinity can still be obtained on the RG substrates when the substrate temperature is 80 degrees C or higher. (C) 2014 AIP Publishing LLC.