文献类型：期刊文献

英文题名：Memory properties of a Ge nanocrystal MOS device fabricated by pulsed laser deposition

作者：Ma, X.[1];Wang, C.[1]

机构：[1]Shaoxing Univ, Inst Photoelect Mat, Shaoxing 312000, Zhejiang, Peoples R China

年份：2008

卷号：92

期号：4

起止页码：589

外文期刊名：APPLIED PHYSICS B-LASERS AND OPTICS

收录：SCI-EXPANDED(收录号：WOS:000258717400020)、、EI(收录号：20083711528043)、Scopus(收录号：2-s2.0-50849109830)、WOS

基金：This research work was supported in part by the National Natural Science Foundation (No. 60776004) and the Natural Science Foundation of Zhejiang Province (No. Y405043).

语种：英文

外文关键词：Argon lasers - Leakage currents - MOS devices - Nanocrystals - Programmable logic controllers - Pulsed laser deposition - Threshold voltage

外文摘要：The charge-storage properties of Ge nanocrystal (Nc) memory devices with MOS structure have been studied. The Ge nanocrystals (Ncs) were prepared on a p-Si (100) matrix by means of pulsed laser deposition (PLD) combined with rapid annealing in the presence of Ar gas. The device is characteristic of better switching characteristics (the I-on/I-off > 10(5)), low leakage current, which was attributed to the effect of Coulomb blockade preventing injection. A significant threshold-voltage shift of 0.85 V was observed when an operating voltage of 5 V was implemented on the device. The kind of hysteresis behavior in the double sweep suggests that the device has a good electrostatic control over the Ge Nc channel.