文献类型：会议论文

英文题名：Charge Storage Characteristics of Ni-NiOx core-shell Nanocrystals embedded in SiO2 gate oxide

作者：Ni Henan[1,2];Wu Liangcai[3];Hui Chun[2];Fang Zebo;Li Zhibin[1]

机构：[1]ShaoXing Univ, Dept Phys, Shaoxing 312000, Zhejiang, Peoples R China;[2]Shanghai Jiao Tong Univ, Res Inst Micro Nano Sci & Technol, Shanghai 200030, Peoples R China;[3]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

会议论文集：14th Annual Conference of the Chinese-Society-of-Micro-Nano-Technology, (CSMNT) / 3rd International Conference of the Chinese-Society-of-Micro-Nano-Technology

会议日期：NOV 04-07, 2012

会议地点：Hangzhou, PEOPLES R CHINA

语种：英文

外文关键词：NC Nonvolatile memory; Ni-NiOx core-shell NCs; Retention characterisitics; P/E speed

外文摘要：The memory characteristics of Ni-NiOx core-shell nanocrystals (NCs) in the metal-oxide-semiconductor (MOS) capacitor structure were investigated. Scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) confirm the formation of the spherically shaped, well isolated, and uniformly distributed Ni NCs surrounded by NiOx (similar to 1nm) in SiO2 gate oxide. The Ni-NiOx NCs embedded in SiO2 exhibited a large memory window of 9.8 V as well as efficient programming/erasing speed and improved retention characteristics of about 10 years. A possible band model needed for injection efficiency of carriers was given by considering the electron/hole barrier width and the additional interface states through the NiOx shell layer.