文献类型：期刊文献

英文题名：Electron interaction effects on the thermoelectric power of a quantum dot at T > T-K

作者：Yan, Yonghong[1];Wu, Haifei[1];Jiang, Feng[2];Zhao, Hui[3,4]

机构：[1]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[2]Shanghai Univ Elect Power, Sch Math & Phys, Shanghai 200090, Peoples R China;[3]Tongji Univ, Minist Educ, Key Lab Adv Microstruct Mat, Shanghai 200092, Peoples R China;[4]Tongji Univ, Dept Phys, Shanghai 200092, Peoples R China

年份：2014

卷号：87

期号：10

外文期刊名：EUROPEAN PHYSICAL JOURNAL B

收录：SCI-EXPANDED(收录号：WOS:000344168500002)、、WOS

基金：The work is supported by NSFC (Grant Nos. 11204180 and 51202149) and the Zhejiang Provincial Natural Science Foundation of China (Grant No. LQ12F04001).

语种：英文

外文摘要：In the absence of phonon thermal conductivity, we theoretically investigate the output power of an interacting quantum dot thermoelectric setup that is moderately coupled to two electronic reservoirs in the regime T >> TK. In the noninteracting case, the output power is maximized when the energy level of the dot is around a critical value epsilon(c). We find that when the energy level of the dot is lower than ec, Coulomb interaction can enhance the maximum thermoelectric power that can be achieved by tuning the bias and a wider operating region is also observed. However, when the energy level of the dot is higher than ec, Coulomb interaction suppresses the maximum power. Finally when the dot level is around ec, Coulomb interaction has minimal effects on the maximum power.