文献类型：期刊文献

英文题名：Interaction-driven quantum anomalous Hall effect in halogenated hematite nanosheets

作者：Liang, Qi-Feng[1];Zhou, Jian[2,3];Yu, Rui[4];Wang, Xi[5];Weng, Hongming[6,7,8]

机构：[1]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[2]Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China;[3]Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China;[4]Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China;[5]Beijing Jiaotong Univ, Sch Sci, Beijing 100044, Peoples R China;[6]Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China;[7]Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China;[8]Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China

年份：2017

卷号：96

期号：20

外文期刊名：PHYSICAL REVIEW B

收录：SCI-EXPANDED(收录号：WOS:000414529300009)、、EI(收录号：20200089524)、Scopus(收录号：2-s2.0-85039730378)、WOS

基金：We thank the valuable discussion with Ziyang Meng and Chen Fang. This work is supported by National Natural Science Foundation of China (NSFC) (Grant No. 11574215, No. 11274359, and No. 11422428). Q.-F.L. acknowledges the support from the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry of China. H.W. is supported by the National Key Research and Development Program of China (Grant No. 2016YFA0300600), and the "Strategic Priority Research Program (B)" of the Chinese Academy of Sciences (Grant No. XDB07020100). The calculations in this work were performed on the supercomputer of the Shanghai Supercomputer Center and the computer facilities in the High Performance Computing Center of Nanjing University.

语种：英文

外文摘要：Based on first-principle calculations and k . p model analysis, we show that the quantum anomalous Hall (QAH) insulating phase can be realized in the functionalized hematite (or alpha-Fe2O3) nanosheet, and the obtained topological gap can be as large as similar to 300 meV. The driving force of the topological phase is the strong interactions of localized Fe 3d electrons operating on the quadratic band crossing point of the noninteracting band structures. Such an interaction driven QAH insulator is different from the single particle band topology mechanism in the experimentally realized QAH insulator, the magnetic ion doped topological insulator film. Depending on the thickness of the nanosheet, a topological insulating state with helical-like or chiral edge states can be realized. Our work provides a realization of the interaction-driven QAH insulating state in a realistic material.