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Asymmetric Growth of Tetragon-Shaped Single-Crystalline Graphene Flakes on Copper Foil by Annealing Treatment under Oxygen-Free Conditions  ( SCI-EXPANDED收录 EI收录)   被引量:6

文献类型:期刊文献

英文题名:Asymmetric Growth of Tetragon-Shaped Single-Crystalline Graphene Flakes on Copper Foil by Annealing Treatment under Oxygen-Free Conditions

作者:Shi, Bi-Yun[1,2];Cao, Qao-Jun[1,2];Wang, Qun[1,2];Han, Xu[1,2];Wu, Hai-Fei[1,2];Chu, Lei-Qang[1,2];Fang, Ze-Bo[1,2];Huang, Han[3];Tang, Jian-Xin[4];Dou, Wei-Dong[1,2,4]

机构:[1]Shaoxing Univ, Lab Low Dimens Carbon Mat, Shaoxing 312000, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[3]Cent S Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China;[4]Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China

年份:2019

卷号:123

期号:4

起止页码:2642

外文期刊名:JOURNAL OF PHYSICAL CHEMISTRY C

收录:SCI-EXPANDED(收录号:WOS:000457816600066)、、EI(收录号:20190406419538)、Scopus(收录号:2-s2.0-85060311202)、WOS

基金:The work described in this article was supported by grants from the National Natural Science Foundation of China (Nos 61474077, 11874427, and 51872186) and the Natural Science Foundation of Zhejiang Province (No. LY19F040005). H.H.

语种:英文

外文关键词:Copper - Copper metallography - Grain size and shape - Oxygen - Scanning electron microscopy - Single crystals

外文摘要:Engineering graphene into a particular shape is vital for potential industrial applications. To this end, better understanding of the growth mechanism is needed to control the growth behavior of graphene on a substrate surface with a specific shape. In this work, a tetragon-shaped graphene single crystal (TS_GSC) with millimeter-scale grain size was achieved on copper foil, which was annealed at oxygen-free conditions (AOF) prior to graphene growth. The TS_GSC grains are featured by two dendritic Frontiers at the shorter-edge (SE) sides and two sharp Frontiers at the longer-edge (LE) sides of graphene grain. By combining scanning electron microscopy, optical microscopy, and Raman mapping with carbon isotope labeling, we revealed for the first time an asymmetric growth behavior of TS_GSC grains on an AOF-treated copper substrate. It was supposed that the growth of graphene was determined by the diffusion limited aggregation mechanism at the SE side, whereas it was governed by the edge-determined atom-attachment mechanism at the LE side of graphene grain. In addition to single-layer graphene, tetragon-shaped bilayered graphene with grain size over 200 pm was also achieved on the AOF-treated copper substrate.

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