详细信息
Red light sensitive heterojunction organic field-effect transistors based on neodymium phthalocyanine as photosensitive layer ( SCI-EXPANDED收录 EI收录) 被引量:7
文献类型:期刊文献
英文题名:Red light sensitive heterojunction organic field-effect transistors based on neodymium phthalocyanine as photosensitive layer
作者:Lv, Wenli[1];Tang, Yu[1];Yao, Bo[1,3];Zhou, Maoqing[1];Luo, Xiao[1];Li, Yao[1];Zhong, Junkang[1];Sun, Lei[1];Peng, Yingquan[1,2]
机构:[1]Lanzhou Univ, Sch Phys Sci & Technol, Inst Microelect, Lanzhou 730000, Peoples R China;[2]Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China;[3]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China
年份:2015
卷号:589
起止页码:692
外文期刊名:THIN SOLID FILMS
收录:SCI-EXPANDED(收录号:WOS:000360320000109)、、EI(收录号:20153501218146)、Scopus(收录号:2-s2.0-84940047737)、WOS
基金:This work was supported by the National Natural Science Foundation of China Grant No. 10974074 and the Research Fund for the Doctoral Program of Higher Education of China Grant No. 20110211110005.
语种:英文
外文关键词:Photoresponsive organic field-effect transistors; Neodymium Phthalocyanine; Heterojunction
外文摘要:Compared with organic photodiodes, photoresponsive organic field-effect transistors (photOFETs) exhibit higher sensitivity and lower noise. The performance of photOFETs based on conventional single layer structure is generally poor due to the low carrier mobility of the active channel materials. We demonstrate a high performance photOFET operating in red light with a structure of C60/neodymium phthalocyanine (NdPc2) planar heterojunction. PhotOFETs based on single-layer NdPc2 and C60/NdPc2 heterojunction (denoted as NdPc2-photOFETs and C60/NdPc2-photOFETs, respectively) were fabricated and characterized. It is concluded that the photOFETs with heterojunction structure showed superior performance compared to that of single layer photOFETs. And for red light with a wavelength of 655 nm, C60/NdPc2-photOFETs exhibited a large photoresponsivity of similar to 0.8 A/W, which is approximately 62 times larger than that of NdPc2-photOFETs under the same conditions. The high performance of C60/NdPc2-photOFETs is attributed to its high light absorption coefficient, high exciton dissociation efficiency and high carrier mobility. (C) 2015 Elsevier B.V. All rights reserved.
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