文献类型：期刊文献

英文题名：Modulation of the microstructure, optical and electrical properties of sputtering-driven Yb2O3 gate dielectrics by sputtering power and annealing treatment

作者：Hao, Lin[1];He, Gang[1,2];Fang, Zebo[3];Wang, Die[1];Sun, Zhaoqi[1];Liu, Yanmei[1]

机构：[1]Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Peoples R China;[2]Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China;[3]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China

年份：2020

卷号：508

外文期刊名：APPLIED SURFACE SCIENCE

收录：SCI-EXPANDED(收录号：WOS:000516818700124)、、WOS

基金：The authors acknowledge the support from National Natural Science Foundation of China (11774001, 51572002, 51872186), Open fund for Discipline Construction, Institute of Physical Science and Information Technology, Anhui University (S01003101).

语种：英文

外文关键词：High-k gate dielectrics; Interface chemistry; Electrical properties; Leakage conduction mechanisms; Sputtering

外文摘要：The effect of sputtering power and annealing temperature on the microstructure, optical and electrical properties of sputtering-derived Yb2O3 high-k gate dielectrics on Si substrate have been investigated systematically. Based on measurements by ultraviolet-visible spectroscope (UV-Vis) and spectroscopic ellipsometry (SE), the increase in band gap and reduction in refractive index have been detected. Structural analyses by x-ray diffraction (XRD) reveal that the Yb2O3 thin films exhibit a cubic phase at higher annealing temperature. X-ray photoelectron spectroscopy (XPS) analyses demonstrate the decreased Yb silicate and low-k SiO2 interfacial layer for the samples annealed at 300 degrees C. Electrical measurements have indicated that Yb2O3/Si gate stacks annealed at 300 degrees C shows excellent dielectric performance with leakage current density of 3.66 x 10(-8) A/cm(2) at applied voltage of 1 V. As a supplement, the leakage current conduction mechanisms of MOS capacitor for different annealing temperature have been discussed systematically.