文献类型：期刊文献

英文题名：Enhanced thermoelectric performance of SnSe doped with layered MoS2/graphene

作者：Yang, Shidan[1];Si, Jianxiao[1];Su, Qingmei[1];Wu, Haifei[2]

机构：[1]Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China

年份：2017

卷号：193

起止页码：146

外文期刊名：MATERIALS LETTERS

收录：SCI-EXPANDED(收录号：WOS:000395842600038)、、WOS

基金：This work was sponsored by the National Natural Science Foundation of China (Grant Nos. 51302248, 51202149 and 11504330), Zhejiang Provincial Natural Science Foundation of China (Grant No.Y1110563).

语种：英文

外文关键词：Thermoelectric performance; Nanocomposites; Sintering; Tin selenide

外文摘要：We report the enhancement of thermoelectric properties in p-type SnSe by the addition of layered MoS2/graphene (MoS2/G). Highly oriented SnSe + MoS2/G (x wt%, x = 0, 0.2, 0.4, 0.8, 1.6 and 3.2) composites have been synthesized by rapid induction melting followed by rapid hot pressing. It is found that the addition of MoS2/G can enhance the maximal power factor from similar to 1.83 mu W cm(-1) K-2 for pristine SnSe to similar to 4.68 OAT cm(-1) K-2 for a SnSe + 3.2 wt% MoS2/G sample. Moreover, the layered MoS2/G also contributes to a low lattice thermal conductivity due to phonons scattering at grain boundaries. A maximum ZT of 0.98 is achieved in the SnSe + 3.2 wt% MoS2/G sample at 810 K Our results provide a possible strategy to enhance the thermoelectric performance of SnSe. (C) 2017 Elsevier B.V. All rights reserved.