文献类型：期刊文献

英文题名：Morphological evolution and growth mechanism of hierarchical structure of PbTe films grown by off-axis magnetron co-sputtering

作者：Si, Jianxiao[1,2];Zhao, Ji[1];Ding, Guangchao[1];Wu, Haifei[3]

机构：[1]Zhejiang Normal Univ, Coll Math Phys & Informat Engn, Jinhua 321004, Peoples R China;[2]Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China;[3]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China

年份：2014

卷号：321

起止页码：233

外文期刊名：APPLIED SURFACE SCIENCE

收录：SCI-EXPANDED(收录号：WOS:000345507900033)、、EI(收录号：20144900275964)、Scopus(收录号：2-s2.0-84912122064)、WOS

基金：This work was sponsored by the National Natural Science Foundation of China (Grant Nos. 51302248 and 51202149), Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012) and Zhejiang Provincial Key Laboratory (No. 2013E10022), Zhejiang Provincial Natural Science Foundation of China (Grant No. LQ12F04001).

语种：英文

外文关键词：Lead Telluride thin film; Morphology; Growth mechanism; Sputtering

外文摘要：The morphological evolution of PbTe thin films grown by off-axis co-sputtering was studied. The hierarchical structures with various shapes including pyramids, truncated octahedrons, triangular shape plates and flower shape mounds were formed on the surface by adjusting the co-sputter Telluride (Te) flux and substrate temperatures. The pyramids were favor to form under low co-sputter Te flux (<0.06 angstrom/s) at any growth temperatures between 150 degrees C and 320 degrees C. The columnar growth mode was proposed to explain the pyramid formation. The shape transitions from pyramids to truncated octahedrons and triangular shape plates were gradually taking place with the Te flux increased from 0.13 angstrom/s to 0.4 angstrom/s. The evolution was mainly attributed to the change in the ratio of growth rate between the {1 1 1} and {1 0 0} planes. The origin of flower shape mounds may be relative to the kinetic growth of these crystal habits of PbTe due to low mobility at 220 degrees C. (C) 2014 Elsevier B.V. All rights reserved.