文献类型：期刊文献

英文题名：A model for the frequency dispersion of the high-k metal-oxide- semiconductor capacitance in accumulation

作者：Yao, B.[1,2]; Fang, Z.B.[1]; Zhu, Y.Y.[3]; Ji, T.[3]; He, G.[4]

机构：[1] Department of Physics, Shaoxing University, Shaoxing 312000, China; [2] School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; [3] Department of Mathematics and Physics, Shanghai University of Electric Power, Shanghai 200090, China; [4] School of Physics and Materials Science, Anhui Key Laboratory of Information Materials and Devices, Anhui University, Hefei 230039, China

年份：2012

卷号：100

期号：22

外文期刊名：Applied Physics Letters

收录：EI(收录号：20122415120524)、Scopus(收录号：2-s2.0-84862123407)

语种：英文

外文关键词：MOS devices - Dispersions - Oxide semiconductors - Equivalent circuits - Dielectric devices - High-k dielectric - Metals - Silicon compounds

外文摘要：High-frequency capacitance-voltage measurements have been made on metal-oxide-semiconductor capacitors by using single crystalline Er 2O3 high-k gate dielectrics. Based on our analysis, it has been found that frequency dispersion of Er2O3 capacitance in accumulation decreases consistently with the increase of the frequency. A correction model is proposed to explain these frequency dispersion phenomena and the capacitance-frequency equations are obtained from the impedance expression of the equivalent circuit. Based on the simulated capacitance-frequency, it can be concluded that frequency dispersion of Er2O3 capacitance in accumulation originates from the existence of the parasitic resistances, the series resistances, and the formed SiOx interfacial layer. ? 2012 American Institute of Physics.