文献类型：期刊文献

英文题名：Structural characteristics of amorphous Er₂O₃ films grown on Si(001) by reactive evaporation

作者：Fang Ze-Bo[1,2];Tan Yong-Sheng[1];Zhu Yan-Yan[2];Chen Sheng[2];Jiang Zui-Min[2]

机构：[1]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China;[2]Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China

年份：2008

卷号：23

期号：2

起止页码：357

外文期刊名：JOURNAL OF INORGANIC MATERIALS

收录：SCI-EXPANDED(收录号：WOS:000254495300031)、、WOS

语种：英文

外文关键词：high k dielectric film; Er2O3; reactive evaporation

外文摘要：High k dielectric Er2O3 were deposited on p-type Si(100) substrates by reactive evaporation using metallic Er source at room temperature in an oxygen atmosphere. The composition of the films is determined to be stoichiometric. X-ray diffraction, reflection high energy electron diffraction and high resolution transmission electron microscopy tests reveal that the films are amorphous even after thermal annealing at 700 degrees C. The films have very flat surface after high temperature annealing. The dielectric constant of Er2O3 films is 12.6, an effective oxide thickness of 1.4nm is achieved, with a low leakage current density Of 8X10(-4) A/cm(2) at electric field of 1MV/cm after annealing. The obtained results indicate that the amorphous Er2O3 film is a promising candidate for high k gate dielectric in Si microelectronic devices.