文献类型：期刊文献

英文题名：Interface Optimization and Modulation of Leakage Current Conduction Mechanism of Yb2O3/GaSb MOS Capacitors with (NH4)2S Solutions Passivation

作者：Hao, Lin[1]; He, Gang[1]; Qiao, Lesheng[1]; Fang, Zebo[2]; Yao, Bo[2]

机构：[1] Radiation Detection Materials and Devices Lab, School of Physics and Materials Science, Anhui University, Hefei, 230601, China; [2] School of Mathematical Information, Shaoxing University, Shaoxing, 312000, China

年份：2021

卷号：42

期号：2

起止页码：140

外文期刊名：IEEE Electron Device Letters

收录：EI(收录号：20210209761981)、Scopus(收录号：2-s2.0-85099107472)

语种：英文

外文关键词：Sulfur - Temperature - X ray photoelectron spectroscopy - MOS capacitors - III-V semiconductors - Sulfur compounds - Passivation

外文摘要：In current work, the impact of ammonium sulfide (NH4)2S solution passivation with varied pH value on the Yb2O3/n-GaSb interface has been investigated comparatively. Compared with control samples, the neutral (NH4)2S solution passivation can effectively reduce oxides layer on GaSb surface and gate leakage via X-ray photoelectron spectroscopy (XPS) measurements and electrical characterization. High-low frequency capacitance method was used to evaluate interface-state density Dit , it was found that capping with Yb2O3 can delay the interface-state generation and the lowest Dit value of 5.18 × 1012 cm-2 eV-1 for Yb2O3/GaSb capacitor with neutral (NH4)2S was achieved. Moreover, the possible leakage current conduction mechanisms for capacitors measured at room temperature and low temperature have also been discussed systematically. ? 1980-2012 IEEE.