文献类型：期刊文献

中文题名：X射线光电子能谱法研究In0.53Ga0.47As基Er2O3薄膜的能带排列

英文题名：Energy Band Alignment of Er2O3 Films on In0.53Ga0.47As Substrates by X-Ray Photoelectron Spectroscopy

作者：潘小杰[1,2];徐海涛[2];姚博[2];朱燕艳[1];曾丽雅[2];方泽波[2]

机构：[1]上海电力学院,上海200090;[2]绍兴文理学院,浙江绍兴312000

年份：2019

卷号：56

期号：7

起止页码：575

中文期刊名：微纳电子技术

外文期刊名：Micronanoelectronic Technology

收录：CSTPCD、、北大核心2017、北大核心

基金：国家自然科学基金资助项目(61504082,51672172);上海市自然科学基金资助项目(15ZR1418700);浙江省自然科学基金资助项目(LQ16F040001,LY15A040001);绍兴市科技规划资助项目(2017B70063,2015B70009)

语种：中文

中文关键词：Er2O3/In0.53Ga0.47As异质结;高k栅介质;分子束外延(MBE);X射线光电子能谱(XPS);能带偏移

外文关键词：Er2O3/In0.53 Ga0.47 As heterojunction;high-k gate dielectric;molecular beam epitaxy (MBE);X-ray photoelectron spectroscopy (XPS);band offset

中文摘要：采用分子束外延(MBE)法在In0.53Ga0.47As衬底上沉积了金属Er薄膜,后经氧气退火得到Er2O3薄膜。台阶仪测得该Er2O3薄膜厚约10 nm。X射线光电子能谱(XPS)显示,采用此方法得到的Er2O3薄膜符合化学计量比。原子力显微镜测试结果显示,该薄膜表面平整。采用X射线光电子能谱同时测得Er 4d、In 3d和O1s的芯能级谱、Er2O3的价带谱以及O1s的能量损失谱,从而得到Er2O3的禁带宽度以及Er2O3与In0.53Ga0.47As衬底之间的价带偏移和导带偏移,数值分别为(5.95±0.30)eV、(-3.01±0.10)eV和(2.24±0.30)eV。通过X射线光电子能谱方法得到了Er2O3/In0.53Ga0.47As异质结的能带排列。从能带偏移的角度来看,上述研究结果表明,Er2O3是一种非常有应用前景的In0.53Ga0.47As基栅介质材料。

外文摘要：A metal Er film was deposited on the In0. 53 Ga0. 47 As substrate by molecular beam epitaxy (MBE) method, and then the Er2O3 film was obtained after annealing in oxygen. The Er2O3 film has a thickness of about 10 nm measured by a step meter.X-ray photoelectron spectroscopy (XPS) shows that the Er2O3 film obtained by this method is stoichiometric. Atomic force microscopy test results show that the surface of the film is smooth. Er 4d, In 3d, O Is core level spectra, Er2O3 valence band spectrum and O Is energy loss spectrum were obtained by X-ray photoelectron spectroscopy. Then the energy gap of Er2 O3, the valence band offset and conduction band offset between Er2O3 and In0.53Ga0.47As substrate were confirmed, the values of which were found to be (5. 95 ± 0. 30) eV,(- 3. 01 ± 0. 10 ) eV and (2. 24 ± 0. 30) eV, respectively. The energy band arrangement of the Er2O3/In0.53Ga0.47 As heterojunction was obtained by X-ray photoelectron spectroscopy. From the band offsets viewpoint, the above study results indicate that Er2O3 is a gate dielectric material on In0.53Ga0.47 As substrates with promising applications.