文献类型：期刊文献

英文题名：High thermoelectric performance of n-type Mg3Bi2 films deposited by magnetron sputtering

作者：Shao, Yaoming[1];Zheng, Pingping[1];Dong, Tianhao[1];Wei, Lianghuan[1];Wu, Haifei[2];Si, Jianxiao[1]

机构：[1]Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Peoples R China;[2]Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R China

年份：2024

卷号：220

外文期刊名：VACUUM

收录：SCI-EXPANDED(收录号：WOS:001127608500001)、、EI(收录号：20234815126765)、Scopus(收录号：2-s2.0-85178061378)、WOS

基金：This work was sponsored by the Zhejiang Provincial Natural Science Foundation of China (Grant No. LY19E020009) .

语种：英文

外文关键词：Thermoelectric properties; n-typeMg3Bi2; Preferred orientation; Films

外文摘要：Mg3Bi2 are of great interest for thermoelectric applications near room temperature. In this paper, A metastable cubic phase(c-Mg3Bi2) films were prepared on glass substrate using Mg and Bi elemental targets by magnetron sputtering. Investigations were done on the phase composition, microstructure and thermoelectric properties of films that were deposited with various atomic ratios of Bi to Mg. When the atomic ratio of Mg/Bi exceeded the stoichiometry of 3:2, the films displayed a metastable cubic phase (c-Mg3Bi2) with a highly (111) preferred orientation. The deposited (c-Mg3Bi2) films possess n -type conductivity characteristics with high carrier mobility. In the temperature range of 300-490 K, a state-of-the-art average PF of 3.11 mu W cm- 1K-2 is attained in a 23 at.% Bi film. A fully Mg3Bi2 thermoelectric device consisting of both n-type and p -type Mg3Bi2 thin films is fabricated. It demonstrates a maximum output power density of 239 mu W cm-2 at a temperature difference of 20 K. This work offers an effective approach to development of thermoelectric devices based on Mg3Bi2 materials.